AP Memory

S-SiCap^TM中介层 IP

方案內容

爱普运用DRAM制程工艺中内含电容的特性，提供内含S-SiCap^TMInterposer方案。相较于DTC方案，爱普提供的S-SiCap^TM Interposer 有较低的电容高度可以实现较薄的中介层厚度并减少TSV寄生电阻与电容值。

Key Features

更多解决方案

世界第一个 3D 异质整合 DRAM 及逻辑晶片开发

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