愛普,矽電容,S-Sicap,inteposer,中介層,高電容密度

愛普科技擴大S-SiCapTM技術應用版圖 滿足AI與HPC新需求

S-SiCapTM產品線涵蓋分離式矽電容(Discrete Devices)與矽電容中介層IPC(InterPoser with silicon Capacitor)兩大類型,對應不同系統架構與應用情境,滿足多元設計需求



全球客製化記憶體解決方案設計公司愛普科技今日宣布,S-SiCapTM(Stack Silicon Capacitor)產品線持續深化技術佈局,聚焦AI伺服器與高效能運算(HPC)的整合挑戰。S-SiCapTM產品線涵蓋分離式矽電容(Discrete Devices)與矽電容中介層IPC(InterPoser with silicon Capacitor)兩大類型,對應不同系統架構與應用情境,滿足多元設計需求。



愛普科技的分離式矽電容S-SiCapTM Gen4電容值密度已提升至 3.8 μF/mm²,較前一代Gen3再增逾50%。為滿足高效能運算與AI伺服器對高性能與功率的需求趨勢,Gen4亦率先導入嵌入式基板(Embedded Substrate)封裝,目前已送樣進行製程驗證,量產導入時程將自2026年起逐步展開。



另一方面,矽電容中介層S-SiCapTM Interposer採用矽晶圓作為中介層基板,內建高電容密度的矽電容,顯著強化裸晶對裸晶(Die-to-Die)、序列器/解序列器(SerDes)及高頻寬記憶體(HBM)等高速I/O應用的訊號與電源穩定性。愛普並攜手供應鏈合作,導入接合曝光技術(reticle-stitching technology),擴展中介層裸晶面積,進而承載更多Chiplet IC,滿足先進封裝對更高整合度的需求。目前S-SiCapTM Interposer已完成客戶端的封裝與可靠度驗證,並於第三季末正式進入四個reticle的量產階段,新專案亦陸續展開。



愛普科技總經理洪志勳表示,隨著AI與高效能運算應用快速成長,市場對電源完整性與高速訊號傳輸的要求日益嚴苛。愛普透過S-SiCapTM產品線,將矽電容以分離式及中介層方式整合於各類先進封裝架構,兼具高效能、高整合度與設計彈性,滿足新世代AI與HPC系統的嚴苛需求。展望未來,愛普也正積極開發能應用在有機中介層(Organic Interposer)的矽電容產品,持續拓展產品版圖。



關於愛普科技股份有限公司

愛普科技股份有限公司(TWSE:6531)是無晶圓廠客製化記憶體設計和IP解決方案的半導體公司。產品包括:IoT記憶體產品(IoTRAMTM)、AI記憶體解決方案(VHMTM)、矽電容(S-SiCapTM)。愛普科技擁有強大的研發能力,長期致力為行動通訊、穿戴裝置、物聯網、高階手機應用、高效能運算、邊緣運算等領域,提供高效能、低功耗的創新客製化晶片及解決方案,協助全球製造商打造更具競爭力的產品。

欲瞭解更多資訊,請訪問https://www.apmemory.com。


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2025-09-09

愛普科技 ApSRAMTM開創高效能低功耗記憶體新方案

ApSRAMTM為愛普科技虛擬靜態隨機存取記憶體(PSRAM)再進階版本,採用全新架構設計,專為邊緣運算與物聯網應用打造,提供低功耗、低延遲的高效能記憶體方案

搜尋
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  • S-SiCap 中介層 IP
  • 法人說明會
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